X-ray Topography of Laser Irradiated Silicon

Photo of X-Ray topography and laser irridation spot.

Laser irradiated 100 pulses at 0.39 J/cm2 peak fluence per pulse. Arrow indicates laser irradiation spot.

Silicon wafers were irradiated with a femtosecond pulsed laser with pulse lengths of 150 fs. The spot size was approximately 110 by 84 microns

Photo of X-Ray topography.

Laser irradiated 100 pulses at 4.83 J/cm2 peak fluence per pulse.

The images to the right are stills from an X-ray topography rocking curve of a silicon crystal taken at a laser irradiated spot on the crystal.

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